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| Switching Diodes MA3V175E, MA3V176E Silicon epitaxial planar type Unit : mm For switching circuits I Features * Short reverse recovery time trr * Small terminal capacitance, Ct 4.0 0.2 I Absolute Maximum Ratings Ta = 25C Reverse voltage (DC) Peak reverse voltage Forward current (DC) Peak forward current MA3V175E MA3V176E MA3V175E MA3V176E Single Double Single Double IFSM Tj Tstg IFM IF VRM VR 40 80 40 80 100 150 225 340 500 750 150 -55 to +150 C C mA mA mA V 1.27 1.27 2.54 0.15 V 1 2 3 1 : Anode 2 : Cathode 3 : Anode New S-Type Package Internal Connection Non-repetitive peak Single forward surge current* Double Junction temperature Storage temperature Note) * : t = 1 s 1 2 3 I Electrical Characteristics Ta = 25C Parameter Reverse current (DC) MA3V175E MA3V176E Forward voltage (DC) Reverse voltage (DC) MA3V175E MA3V176E Terminal capacitance Reverse recovery time* Ct trr VR = 0 V, f = 1 MHz IF = 10 mA, VR = 6 V Irr = 0.1 * IR, RL = 100 VF VR Symbol IR VR = 35 V VR = 75 V IF = 100 mA IR = 100 A 40 80 4 3 pF ns Conditions Min Typ Max 0.1 0.1 1.2 V V Unit A Note) 1. Rated input/output frequency: 100 MHz 2. * : trr measuring circuit DUT Input Pulse tr Sampling Oscilloscope Ri = 50 tP 10% 90% tp = 100 ns tr = 0.6 ns = 0.05 0 IF Output Pulse trr t Irr = 0.1*IR IF = 10 mA VR = 6 V RL = 100 IF Rs = 50 V = VR + IR*RS 2.0 0.2 marking 0.45 - 0.1 0.7 0.1 + 0.2 Parameter Symbol Rating Unit 15.6 0.5 3.0 0.2 1 MA3V175E, MA3V176E IF V F 103 102 Switching Diodes IR V R MA3V175E 102 Ta = 125C IR V R MA3V176E 102 Forward current IF (mA) 10 Ta = 125C 10 Reverse current IR (A) Reverse current IR (A) 10 1 75C 1 75C 1 Ta = 125C 75C 25C 10-1 25C 10-1 25C 10-2 10-1 - 20C 10-2 10-2 0 0.2 0.4 0.6 0.8 1.0 1.2 10-3 10-3 0 20 40 60 80 100 120 0 20 40 60 80 100 120 Forward voltage VF (V) Reverse voltage VR (V) Reverse voltage VR (V) VF Ta 1.2 IR T a 102 MA3V175E 102 IR T a MA3V176E 1.0 10 10 Forward voltage VF (V) Reverse current IR (A) Reverse current IR (A) 0.8 VR = 80 V 1 40 V 10-1 1 VR = 40 V 10-1 20 V 0.6 IF = 10 mA 3 mA 1 mA 0.1 mA 0.4 0.2 10-2 10-2 0 -40 10-3 0 40 80 120 160 -40 0 40 80 120 160 10-3 -40 0 40 80 120 160 Ambient temperature Ta (C) Ambient temperature Ta (C) Ambient temperature Ta (C) Ct VR 10 8 6 f = 1 MHz Ta = 25C Terminal capacitance Ct (pF) 4 2 1 0.8 0.6 0.4 0.2 10 0 4 8 12 16 20 24 28 32 36 40 Reverse voltage VR (V) 2 |
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